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Determination of the order parameter of CuPt-B ordered GaInP2 films by x-ray diffraction

Identifieur interne : 00E163 ( Main/Repository ); précédent : 00E162; suivant : 00E164

Determination of the order parameter of CuPt-B ordered GaInP2 films by x-ray diffraction

Auteurs : RBID : Pascal:02-0255664

Descripteurs français

Pascal (Inist)
- 6166F, 8105E, 6855J, 6110N, Etude expérimentale, Gallium composé, Indium composé, Semiconducteur III-V, Couche mince semiconductrice, Diffraction RX, Structure cristalline.

English descriptors

KwdEn :
- Crystal structure, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Semiconductor thin films, XRD.

Abstract

We present quantitative characterization of atomic ordering in semiconductor alloy films by x-ray diffractometry. In particular, we show that the order parameter of CuPt-B ordered GaInP₂ films can be determined without measuring the fundamental reflections or examining structural details of the ordered domains. Our method is based on the fact that the ordering peak is modulated by statistical displacements of atom planes, which is a function of the degree of ordering. Therefore, by comparing two or more ordering peaks in an x-ray spectrum, the order parameter of an ordered film can be extracted solely for those regions that are, in fact, ordered. The method can straightforwardly be extended to other ordered alloys. © 2002 American Institute of Physics.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Determination of the order parameter of CuPt-B ordered GaInP<sub>2</sub>
 films by x-ray diffraction</title>
<author><name sortKey="Li, J H" uniqKey="Li J">J. H. Li</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5005</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Texas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6064</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Tennessee</region>
</placeName>
<wicri:cityArea>Oak Ridge National Laboratory, Oak Ridge</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Forrest, R L" uniqKey="Forrest R">R. L. Forrest</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5005</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Texas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Moss, S C" uniqKey="Moss S">S. C. Moss</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5005</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Texas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Zhang, Y" uniqKey="Zhang Y">Y. Zhang</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Colorado</region>
</placeName>
<wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Mascarenhas, A" uniqKey="Mascarenhas A">A. Mascarenhas</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Colorado</region>
</placeName>
<wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Bai, J" uniqKey="Bai J">J. Bai</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5005</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Texas</region>
</placeName>
<wicri:cityArea>Physics Department, University of Houston, Houston</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0255664</idno>
<date when="2002-06-01">2002-06-01</date>
<idno type="stanalyst">PASCAL 02-0255664 AIP</idno>
<idno type="RBID">Pascal:02-0255664</idno>
<idno type="wicri:Area/Main/Corpus">00F437</idno>
<idno type="wicri:Area/Main/Repository">00E163</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0021-8979</idno>
<title level="j" type="abbreviated">J. appl. phys.</title>
<title level="j" type="main">Journal of applied physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal structure</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Semiconductor thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6166F</term>
<term>8105E</term>
<term>6855J</term>
<term>6110N</term>
<term>Etude expérimentale</term>
<term>Gallium composé</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Couche mince semiconductrice</term>
<term>Diffraction RX</term>
<term>Structure cristalline</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We present quantitative characterization of atomic ordering in semiconductor alloy films by x-ray diffractometry. In particular, we show that the order parameter of CuPt-B ordered GaInP<sub>2</sub>
 films can be determined without measuring the fundamental reflections or examining structural details of the ordered domains. Our method is based on the fact that the ordering peak is modulated by statistical displacements of atom planes, which is a function of the degree of ordering. Therefore, by comparing two or more ordering peaks in an x-ray spectrum, the order parameter of an ordered film can be extracted solely for those regions that are, in fact, ordered. The method can straightforwardly be extended to other ordered alloys. © 2002 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0>
</fA01>
<fA02 i1="01"><s0>JAPIAU</s0>
</fA02>
<fA03 i2="1"><s0>J. appl. phys.</s0>
</fA03>
<fA05><s2>91</s2>
</fA05>
<fA06><s2>11</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Determination of the order parameter of CuPt-B ordered GaInP<sub>2</sub>
 films by x-ray diffraction</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LI (J. H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>FORREST (R. L.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MOSS (S. C.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ZHANG (Y.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MASCARENHAS (A.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>BAI (J.)</s1>
</fA11>
<fA14 i1="01"><s1>Physics Department, University of Houston, Houston, Texas 77204-5005</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6064</s1>
</fA14>
<fA20><s1>9039-9042</s1>
</fA20>
<fA21><s1>2002-06-01</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>126</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2002 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>02-0255664</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of applied physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We present quantitative characterization of atomic ordering in semiconductor alloy films by x-ray diffractometry. In particular, we show that the order parameter of CuPt-B ordered GaInP<sub>2</sub>
 films can be determined without measuring the fundamental reflections or examining structural details of the ordered domains. Our method is based on the fact that the ordering peak is modulated by statistical displacements of atom planes, which is a function of the degree of ordering. Therefore, by comparing two or more ordering peaks in an x-ray spectrum, the order parameter of an ordered film can be extracted solely for those regions that are, in fact, ordered. The method can straightforwardly be extended to other ordered alloys. © 2002 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60A66F</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60A10N</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6166F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>6110N</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor thin films</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Structure cristalline</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Crystal structure</s0>
</fC03>
<fN21><s1>147</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0221M000627</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Determination of the order parameter of CuPt-B ordered GaInP2 films by x-ray diffraction

Determination of the order parameter of CuPt-B ordered GaInP2 films by x-ray diffraction

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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